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Mosfet N-Channel 0.36A - BSS138P

05-00213564
BSS138P.215
CompanyNEXPERIA Part NumberBSS138P.215
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits
  • Type of transistor: N-MOSFET
  • Polarisation: Unipolar
  • Drain-source voltage: 60V
  • Drain current: 0.36A
  • Power dissipation: 350mW
  • Case: SOT23, TO236AB
  • Gate-source voltage: ±20V
  • On-state resistance: 1.6Ω
  • Mounting: SMD
  • Kind of package: reel, tape
  • Kind of channel: Enhanced
Warranty
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Company
NEXPERIA
Gross Weight
0.001kg
Transistor Type
N-Channel
Max. Drain Current
0.36 A
Max. VDS
60 V
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