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Mosfet N-Channel 16A - IRF530NPBF

Mosfet N-Channel 16A - IRF530NPBF

Infineon (IRF), IRF530NPBF
Out of Stock

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Διαθεσιμότητα Καταστήματος Αθήνας
Out of stock
Infineon (IRF)
Made in:
Transistor Type:
Max. Drain Current:
Max. VDS:
  • Technology: Si
  • Mounting Style: Through Hole
  • Package/Case: TO-220-3
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 100 V
  • Id - Continuous Drain Current: 17 A
  • Rds On - Drain-Source Resistance: 90 mOhms
  • Vgs - Gate-Source Voltage: 20 V
  • Qg - Gate Charge: 24.7 nC
  • Configuration: Single
  • Packaging: Tube
  • Pd - Power Dissipation: 79 W
  • Transistor Type: 1 N-Channel
  • Height: 15.65 mm
  • Length: 10 mm
  • Width: 4.4 mm