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Mosfet P-Channel 23A - IRF9540N

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

05-00095402
Volumetric weight: 0.01kgs
Made in: China
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DESCRIPTION

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

SPECIFICATIONS

Transistor Type:
P-Channel
Max. Drain Current:
23A
Max. VDS:
100V

EXTRA SPECIFICATIONS

  • Manufacturer: IR
  • Manufacturer Part No: IRF9540N
  • Package / Case: TO-220
  • RoHS: Yes
  • Transistor Type: MOSFET
  • Transistor Polarity: P Channel
  • Drain Source Voltage, Vds: -100V
  • Continuous Drain Current, Id: -23A
  • On Resistance, Rds(on): 117mohm
  • Rds(on) Test Voltage, Vgs: -10V

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