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Mosfet P-Channel 23A - IRF9540N

Mosfet P-Channel 23A - IRF9540N

05-00095402

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Company:
International Rectifier
MPN:
IRF9540N
Made in:
China
Transistor Type:
P-Channel
Max. Drain Current:
23A
Max. VDS:
100V

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  • Manufacturer: IR
  • Manufacturer Part No: IRF9540N
  • Package / Case: TO-220
  • RoHS: Yes
  • Transistor Type: MOSFET
  • Transistor Polarity: P Channel
  • Drain Source Voltage, Vds: -100V
  • Continuous Drain Current, Id: -23A
  • On Resistance, Rds(on): 117mohm
  • Rds(on) Test Voltage, Vgs: -10V