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Mosfet N-Channel 33A - IRF540N

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area....
05-00054033
Gross Weight: 0kg
Warranty: Δεν καλύπτεται με εγγύση απο τον Κατασκευαστή
Company: Infineon
Part Number: IRF540NPBF
Made in: China
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DESCRIPTION

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

SPECIFICATIONS

Warranty:
Δεν καλύπτεται με εγγύση απο τον Κατασκευαστή
Company:
Infineon
Part Number:
IRF540NPBF
Gross Weight:
0.001kg
Made in:
China
Transistor Type:
N-Channel
Max. Drain Current:
33A
Max. VDS:
100V

EXTRA SPECS

  • Manufacturer: IR
  • Manufacturer Part No: IRF540N
  • Package / Case: TO-220
  • RoHS: Yes
  • Transistor Type: MOSFET
  • Transistor Polarity: N Channel
  • Drain Source Voltage, Vds: 100V
  • Continuous Drain Current, Id: 33A
  • On Resistance, Rds(on): 44mohm
  • Rds(on) Test Voltage, Vgs: 10V
  • Drain Source On Resistance @ 10V: 44mohm

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