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Mosfet N-Channel 9.7A - IRF520N

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. 

05-00052097
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DESCRIPTION

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. 

SPECIFICATIONS

Transistor Type:
N-Channel
Max. Drain Current:
9.7A
Max. VDS:
100V

EXTRA SPECIFICATIONS

  • Transistor type N-MOSFET
  • Polarisation unipolar
  • Transistor kind HEXFET
  • Drain-source voltage 100V
  • Drain current 9.7A
  • Power 48W
  • Case TO220AB
  • Gate-source voltage 20V
  • On-state resistance 200mΩ
  • Junction-to-case thermal resistance 3.1K/W
  • Mounting THT
  • Gate charge 16.7nC

DOCUMENTS