Infineon

Infineon
05-00049359
Τύπος ΑισθητήραΜαγνητικού πεδίου Τυπική Τάση Εισόδου5VDC, 5.5VDC, 12VDC, 24VDC Ρεύμα Λειτουργίας100mA
150
Διαθέσιμο
+
05-00021100
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL...
ΚατασκευαστήςInfineon Part NumberIR2110PBF Καθ. Βάρος0.001 kg
360
Διαθέσιμο
+
05-00021040
The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,...
ΚατασκευαστήςInfineon Part NumberIR2104PBF Καθ. Βάρος0.001 kg
220
Διαθέσιμο
+
05-00021130
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL...
ΚατασκευαστήςInfineon Part NumberIR2113PBF Καθ. Βάρος0.001 kg
370
Διαθέσιμο
+
05-00016366
Τύπος ΤρανζίστορN-Channel Max. Drain Current100 A Max. VDS60 V
290
Διαθέσιμο
+
05-00087216
These FETs can switch over 60A and 30V and are TO-220 package so they fit nicely into any breadboard or perfboard.
Τύπος ΤρανζίστορN-Channel Max. Drain Current62 A Max. VDS30 V
140
Διαθέσιμο
+
05-00087431
Τύπος ΤρανζίστορN-Channel Max. Drain Current150 A Max. VDS30 V
140
Διαθέσιμο
+
05-00052522
Τύπος ΤρανζίστορN-Channel Max. Drain Current92 A Max. VDS30 V
080
Διαθέσιμο
+
05-00014401
Τύπος ΤρανζίστορN-Channel Max. Drain Current162 A Max. VDS40 V
290
Διαθέσιμο
+
05-00052521
Τύπος ΤρανζίστορN-Channel Max. Drain Current49 A Max. VDS55 V
140
Εξαντλημένο
05-00095402
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Τύπος ΤρανζίστορP-Channel Max. Drain Current23 A Max. VDS100 V
140
Διαθέσιμο
+
05-00054033
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Τύπος ΤρανζίστορN-Channel Max. Drain Current33 A Max. VDS100 V
140
Διαθέσιμο
+
05-00052097
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. 
Τύπος ΤρανζίστορN-Channel Max. Drain Current9.7 A Max. VDS100 V
150
Διαθέσιμο
+
05-00053016
Τύπος ΤρανζίστορN-Channel Max. Drain Current16 A Max. VDS100 V
150
Διαθέσιμο
+
05-00052524
Τύπος ΤρανζίστορN-Channel Max. Drain Current49 A Max. VDS200 V
390
Διαθέσιμο
+
05-00046803
Τύπος ΤρανζίστορN-Channel Max. Drain Current200 A Max. VDS60 V
420
Διαθέσιμο
+
Φίλτρα Αναζήτησης
Τύπος Αισθητήρα
Τύπος Τρανζίστορ
Max. Drain Current
A
A
  • 9.7A
  • 200A
Πρωτόκολλο Eπικοινωνίας
Max. VDS
V
V
  • 30V
  • 200V
Διασύνδεση
Τυπική Τάση Εισόδου