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Mosfet N-Channel 0.36A - BSS138P

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET...
05-00213564
Gross Weight: 0kg
Warranty: Δεν καλύπτεται με εγγύση απο τον Κατασκευαστή
Company: NEXPERIA
Part Number: BSS138P.215
Made in: China
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0.1500
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Price 0.1200 0.1050
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DESCRIPTION

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits

SPECIFICATIONS

Warranty:
Δεν καλύπτεται με εγγύση απο τον Κατασκευαστή
Company:
NEXPERIA
Part Number:
BSS138P.215
Gross Weight:
0.001kg
Made in:
China
Transistor Type:
N-Channel
Max. Drain Current:
0.36A
Max. VDS:
60V

EXTRA SPECS

  • Type of transistor: N-MOSFET
  • Polarisation: Unipolar
  • Drain-source voltage: 60V
  • Drain current: 0.36A
  • Power dissipation: 350mW
  • Case: SOT23, TO236AB
  • Gate-source voltage: ±20V
  • On-state resistance: 1.6Ω
  • Mounting: SMD
  • Kind of package: reel, tape
  • Kind of channel: Enhanced

FILES